Bonding structure of e chuck to aluminum base configuration

ABSTRACT

The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to the embodiments, a bonding layer is formed between a dielectric body comprising the electrostatic chuck and a temperature control base. A flow aperture extends through the dielectric body and is aligned with a flow aperture in the temperature control base. The bonding layer is also configured with an opening that aligns with apertures in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow aperture to protect the bonding layer. In another aspect, a seal is disposed within the flow aperture to seal off the boding layer from gases in the flow aperture.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.16/876,326, filed May 18, 2020, which is a divisional of U.S. patentapplication Ser. No. 15/724,045, filed Oct. 3, 2017, which are allhereby incorporated by reference in their entirety.

BACKGROUND Field

Embodiments of the present disclosure generally relate to a bondinglayer for an electrostatic chuck.

Description of the Related Art

Electrostatic chucks are utilized in a variety of manufacturing andprocessing operations. In semiconductor manufacturing, electrostaticchucks are commonly used to support a substrate in a processing chamber.Semiconductor manufacturing exposes the substrate support, whichcontains the electrostatic chuck, to the processing chamber environmentand a range of temperatures between ambient and substrate processtemperature. In order to maintain the temperature of the substrate at adesired setpoint, the electrostatic chuck, which is formed from aceramic, is coupled to a temperature control base. A conductive bondingmaterial between the ceramic chuck portion and the temperature controlbase connects these two bodies.

The substrate support, including the bonding material exposed at theinterface between the electrostatic chuck and the cooling base at anybackside gas passages extending therethrough, is exposed to the processgases and process reaction byproducts of the manufacturing process. Someof these gases and byproducts, if they come into contact with thebonding material, can deteriorate the bonding material. Inconsistenciesin the bonding material also result during the fabrication and formingthereof. These variations in adhesion strength and material propertiescan result in delamination of the bonding material from theelectrostatic chuck and the temperature control base or locally changethe heat transfer through the binding material, resulting in temperaturevariations across the chucking surface of the electrostatic chuck.Further, the electrostatic chuck and the temperature control base mayhave different coefficients of thermal expansion. When the temperatureof the substrate support increases, such as during process operations,or when the dielectric body and the temperature control base havedifferent temperatures, the stress in the bonding material increases dueto the differing thermal expansions of the electrostatic chuck and thetemperature control base. This increase in stress can result inlocalized delamination of the bonding material when local stressesexceed the bonding strength thereof.

SUMMARY

The present disclosure generally relates to a bonding layer for securinga ceramic body to a metallic body. A flow aperture extends through thebodies. A plug and a seal are optionally disposed within the flowaperture to protect the bonding layer. In certain embodiments, thebonding layer may comprise two layers to form a stepped bond profile.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlyexemplary embodiments and are therefore not to be considered limiting ofits scope, may admit to other equally effective embodiments.

FIG. 1 is a cross-sectional schematic of an exemplary substrate support.

FIG. 2A-2B is a cross-sectional schematic of a bonding structuresecuring an electrostatic chuck and a temperature control membertogether according to one embodiment.

FIG. 3 is a cross-sectional schematic of a bonding structure securing anelectrostatic chuck and a temperature control member together accordingto one embodiment.

FIG. 4 is a cross-sectional schematic of a bonding structure securing anelectrostatic chuck and a temperature control member together accordingto one embodiment.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation thereof with respect to the other embodiment.

DETAILED DESCRIPTION

The present disclosure is a method of bonding an electrostatic chuck toa temperature control base. According to the embodiments, a bondinglayer is formed between a dielectric body comprising the electrostaticchuck and a temperature control base. A flow aperture extends throughthe dielectric body and is aligned with a flow aperture in thetemperature control base. The bonding layer is configured with anopening that is aligned with the apertures in the dielectric body andthe temperature control base. In one aspect, a porous plug may bedisposed within the flow aperture to protect the bonding layer from gaspresent in the flow aperture. In another aspect, a seal is disposedwithin the flow aperture to seal off the boding layer from gas presentin the flow aperture.

FIG. 1 is a schematic cross-sectional view of an exemplary substratesupport for use in a processing chamber. The substrate support 100comprises a dielectric body 102, which forms the electrostatic chuck,and a temperature control base 104. The dielectric body comprises aceramic material, such as alumina or alumina nitride. The temperaturecontrol base 104 comprises a metal such as aluminum. The temperaturecontrol base 104 is fixed to a cylindrical support post (not shown)which extends through a wall of a processing chamber to support thesubstrate support 100 thereon. Alternatively, the temperature controlbase can be fixed to the base on the interior of the chamber. Thesubstrate support 100 may generally have a circular shape but othershapes, such as rectangular or ovoid, capable of supporting a substrate,may be utilized. A bonding layer 106 is disposed between a lower surfaceof the dielectric body 102, which faces the temperature control base104, and an upper surface, opposite of the cylindrical support post ofthe temperature control base 104, which faces the dielectric body 102. Asubstrate W is removably disposable on an upper surface of thedielectric body 102 opposite the bonding layer 106. The bonding layer106 secures, and thermally couples, the dielectric body 102 to thetemperature control base 104.

Electrodes 108 are disposed within the dielectric body 102. Theelectrodes 108 are connected to a power source (not shown) which imposesa voltage on the electrodes to form an electromagnetic field at theinterface of the upper surface of the dielectric body 102 and thesubstrate W. The electromagnetic field interacts with the substrate W tochuck the substrate W to the surface of the dielectric body 102. Theelectrodes may be biased to provide either a monopolar or a bipolarchuck.

Channels 110 disposed within the temperature control base 104 circulatea fluid through the temperature control base 104. The fluid, typically aliquid such as Galden®, flows from a temperature control unit (notshown) through the channels 110 and back to the temperature controlunit. In certain processes, the fluid is used to cool the temperaturecontrol base 104 in order to lower the temperature of the dielectricbody 102 and substrate W disposed thereon. Conversely, the fluid may beused to elevate temperature of the temperature control base 104 to heatthe dielectric body 102 and substrate W thereon. In other embodiments,resistive heaters (not shown) may be disposed within the temperaturecontrol base. In some cases, heat from the resistive heaters, incombination with heat transfer from the temperature control base 104into the fluid, is used to maintain the dielectric body 102 or thesubstrate W at a setpoint temperature.

Flow apertures 112 are disposed within the substrate support 100. Asshown in FIG. 1, the flow apertures 112 are formed to extend though thedielectric body 102, the bonding layer 106, and the temperature controlbase 104. In this configuration, gas introduced through the flowapertures 112 is present in the region between the side of the substrateW which faces the dielectric body 102 and the facing surface of thedielectric body 102. The gas is maintained at a pressure sufficient tocause the gas to serve as a heat conduction path between the substrate Wand the dielectric body 102. A gas source (not shown) is coupled to theflow apertures 112. During processing, a gas such as helium flows fromthe gas source and is delivered to the lower surface of substrate W (thesurface not exposed to the processing area of the chamber) via the flowapertures 112. Some gases are known to degrade the boding layer 106 thatis exposed to the gas at the flow apertures 112.

FIG. 2A and FIG. 2B are cross-sectional schematic views of a dielectricbody 102, a temperature control base 104, and an intermediate bondinglayer 106. In FIGS. 2A-2B, substrate support 100 comprises a dielectricbody 102 and temperature control base 104 like those of FIG. 1. Here,the bonding layer 106 comprises a two part layer 106 a, 106 b. In theembodiment of FIGS. 2A-2B, bonding layers 106 a, 106 b comprise sheetsof a bonding material. The bonding layers 106 a, 106 b comprise anorganic material such as silicone, acrylic, perfluoro polymer, orcombinations thereof, but other materials are contemplated. In certainembodiments, the bonding layer 306 additionally comprises inorganicmaterials, for example alumina, aluminum nitride, or silicon carbide, toimprove specific properties of the bonding layer 306 such as thermalconductivity. Bonding layer 106a is disposed on a surface 208 of thedielectric body 102. Bonding layer 106 b is disposed on a facing surface210 of the temperature control base 104. The bonding layers 106 a, 106 bare adhered to the dielectric body 102 and temperature control base 104,respectively, (FIG. 2A) before forming the completed bonding layer 106therewith (FIG. 2B), which improves the bonding properties of, andincreases the uniformity of the thickness of, the bonding material. Thefinal bonding layer 106 is formed by a curing process. The bonding layer106 may have a thickness in a range of about 100 micrometers to 800micrometers but may also be thicker or thinner as necessary to achievedesire material properties, bonding strength, and heat transferproperties between the dielectric body 102 and the temperature controlbase 104. Though sheets of bonding material are used in FIGS. 2A-2B, itis understood that any method capable of forming the bonding layers maybe used, such as casting, applying a paste, spraying or molding thebonding material on the respective dielectric body 102 and temperaturecontrol base 104 surfaces. Additionally, a different number of layersmay be used to form the bonding layer 106

The flow aperture 112 extends through the substrate support 100. Oneflow aperture is shown in FIGS. 2A-2B for ease of description but it isunderstood that multiple apertures may be utilized. The flow aperture112 is formed though the dielectric body 102, the bonding layer 106, andthe temperature control base 104. The portion of the flow aperture 112disposed within the temperature control base 104 comprises two portions.The first portion extends inwardly toward the center of the body of thetemperature control base 104 from surface 210 facing the dielectric body102. The first portion, which extends partially through the temperaturecontrol base 104, is a counterbore forming a cylindrical recess 212. Thesecond portion extends from the recess 212 through the remainder of thetemperature control base 104, and has a circular cross-section. Thefirst portion and the second portion each have a diameter wherein thediameter of the second portion is less than the diameter of the firstportion, as shown in FIGS. 2A-2B. The bonding layer 106 is disposedadjacent the surface 210 of the temperature control base 104. An openingis formed through each of the bonding layers 106 a, 106 b and theopenings are aligned with the center of the recess 212, formingapertures through each bonding layer 106 a, 106 b. The opening 214 ofbonding layer 106 b has a diameter that is equal to or greater than thediameter of recess 212. Opening 216 of bonding layer 106a has a diameterless than opening 214. In certain embodiments, the opening 216 may havea diameter substantially equal to the diameter of recess 212. Theopenings 214, 216 through the bonding layer 106 create a “stepped bond”when the bonding layers 106 a, 106 b are combined as shown in FIG. 2B.

A series of vanes 218 are formed within the dielectric body 102 and theyare configured to align with the recess 212 and openings 214, 216 topartially define the flow aperture 112. Two vanes, defining, incombination with the adjacent sidewall of the dielectric body 102, threepassages, are shown in FIGS. 2A-2B but any applicable number of vanesmay be practiced with the embodiments herein. A plug 220 is optionallydisposed within the dielectric body 102 aligned with flow aperture 112.The plug 220 is formed from a porous material such as a ceramic whichmay be alumina or zirconia. The plug 220 has a porosity, such as a rangeof porosity between 10% and 80%, which allows the passage of the gasfrom the recess 212, through the openings 214, 216 to the passagesbetween the vanes 218 and fluidly communicate with the area between thesubstrate W when supported on the dielectric body 102, and thedielectric body 102. The plug 220 further prevents particles, ionizedparticles or ionized gas from passing from the processing area, throughthe passages between the vanes 218, and into the gas volume area definedby openings 214, 216 when the substrate W is not on the dielectric body102.

The stepped bond shown in FIGS. 2A-2B advantageously increases theuniformity of the bonding layer due to the forming of two partial layersand then forming the completing bond layer. By increasing the uniformityof the bonding material, the resistance of the bonding material todegradation from exposure to the process gases is increased.Additionally, adhesion is consistent across the bonding layer betweenthe dielectric body and the temperature control base which preventslocal delamination due to stresses caused by thermal expansion of one orboth of the temperature control base and the dielectric body.

FIG. 3 shows a schematic cross section of a substrate support 100 likethat of FIG. 1 and FIGS. 2A-2B. The substrate support 100 of FIG. 3contains identical components to FIGS. 1-2B which share identicalreference numbers and will not be discussed for brevity. A bonding layer306 is disposed between the dielectric body 102 and the temperaturecontrol base 104 securing the dialectic body 102 and the temperaturecontrol base 104 together. In the embodiment of FIG. 3, a single sheetof bonding material is used. However, other methods of applying thebonding material, such as casting, applying a paste, spraying ormolding, or the use of multiple layers of sheet material, is understood.The bonding layer 306 comprises an organic material such as silicone,acrylic, perfluoro polymer, or combinations thereof, but other materialscapable of forming a bond have been contemplated. In certainembodiments, the bonding layer 306 additionally comprises inorganicmaterials, for example alumina, aluminum nitride, or silicon carbide, toimprove specific properties of the bonding layer 306 such as thermalconductivity. An annular opening 302 is formed through the bonding layer306 and is configured to align with the cylindrical recess 212 and vanes218 which, in combination with the annular opening 302, partially definethe flow aperture 112. Again, a single flow aperture 112 is shown inFIG. 3 but any applicable number of apertures may be utilized. Thediameter of opening 302 is smaller than the diameter of the cylindricalrecess 212 such that a shoulder is formed by applying the edge of thebonding layer 306 over the recess 212. The shoulder and opening 302function as a choke for the gas flow to the vanes 218 or plug 220optionally disposed therein. The opening 302 also has a diameter that isless than the diameter of plug 220 such that the bond layer 306 extendsunder plug 220 as shown in FIG. 3. Here, the plug 220 is again employedto prevent particles, ionized particles of material or ionized gas fromthe process environment reaching the bonding material when the substrateW is not present on the dielectric body 102. By extending the bondinglayer 306 over recess 212, the surface area of the temperature controlbase 104 exposed to corrosive process gases is reduced whichsignificantly lessens the corrosion of the metallic temperature controlbase 104.

FIG. 4 shows a substrate support 100 like that of FIGS. 1-3 andidentical components share identical reference numbers. The descriptionof identical components will be neglected again here for brevity. Abonding layer 406 is disposed between, and secures together, dielectricbody 102 and temperature control base 104. A single flow aperture 112 isshown disposed in the substrate support 100 but any applicable numbermay be utilized. An annular opening 414 is formed through the bondinglayer 406 to partially define the flow aperture 112. The opening 414 hasa diameter substantially larger than the cylindrical recess 212. A seal404, such as an O-ring, is optionally disposed in the enlarged diameterof the opening 414. The seal 404 functions to seal off the bonding layer406 from the gas flowing within the flow aperture 112. The seal 404comprises a material capable of withstanding degradation from the gaschemistry. In certain embodiments, the seal 404 comprises a polymer suchas perfluoro polymer (e.g. Viton® or XPE), polytetrafluorethylene(PTFE), or silicone. Other materials such as additional petroleum basedpolymers are also contemplated. Any material suitable for contact withthe process gas flowing in the flow aperture 112 may be utilized.

A plug 420, similar to plug 220 of FIGS. 2-3, is optionally disposed inthe dielectric body 102 adjacent vanes 218. The plug 420 and vanes 218may be provided in a single piece. The plug 420 comprises a porousmaterial, such as a ceramic, wherein the porosity may have a range, suchas 10% to 80% porosity, to allow gas flow through the plug 420 topassages defined by vanes 218 in combination with adjacent sidewalls ofthe dielectric body 102. Plug 420, like plug 220, is again employed toprevent ionized particles of material and ionized gas from the processenvironment reaching the bonding material when the substrate W is notpresent on the dielectric body 102. Plug 420 is configured to receive aring 408. The ring 408 is disposed adjacent the seal 404 and contactsboth seal 404 and plug 420. Ring 408 may comprise a metal or ceramicmaterial. Ring 408 provides an improved sealing surface for seal 404.Seal 404 contacts ring 408 to create a first sealing point. Oppositering 408, seal 404 contacts the temperature control base 104 to create asecond sealing point. The first seal point and second seal point preventgas from bypassing seal 404 and isolates the bonding layer 406 from gaswithin the flow aperture 112. The embodiment herein provides improvedsealing for protecting bonding layer 406 from process gas, therebyincreasing the life and durability of the bonding material.

In certain embodiments, the bonding material of bonding layer 406 can beselected to improve one or more desired properties such as heat transferor high temperature adhesion. Some materials having the desiredproperties may conversely have less resistance to deterioration causedby exposure to the process gas within flow aperture 112. By utilizingseal 404 and ring 408 as shown in FIG. 4, the less resistive materialscan be selected for the bonding material since the seal 404 isolatesbonding layer 406 from the process gas. A second seal (not shown) may bedisposed at an outer perimeter of the bonding layer 406 thereby, incombination with seal 404, the dielectric body 102, and temperaturecontrol base 104, encapsulate bonding layer 406. Accordingly, asubstrate support 100 can have a bonding layer with desirablecharacteristics without reduction in life and durability of the bondinglayer.

It is understood that the embodiments disclosed herein are not limitedto electrostatic chucks. The embodiments may be practiced with anystructure where a bonding layer is utilized. It is further understoodthat the exemplary geometries disclosed herein do not limit the scope ofthe embodiments. Other geometries of flow apertures and bodies have beencontemplated.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

What is claimed is:
 1. A bonding layer structure, comprising: a firstbody having a flow aperture therethrough; a second body having a flowaperture therethough; and a bonding layer disposed between the firstbody and the second body, the bonding layer comprising: a first bondinglayer having a first opening extending through the first bonding layer;and a second bonding layer having a second opening extending through thesecond bonding layer, wherein the second opening has a diameter greaterthan a diameter of the first opening.
 2. The bonding layer structure ofclaim 1, wherein the first bonding layer and the second bonding layercomprise sheets of a bonding material.
 3. The bonding layer structure ofclaim 1, wherein the bonding layer comprises an organic material.
 4. Thebonding layer structure of claim 3, wherein the organic materialcomprises silicone, acrylic, or perfluoro polymer.
 5. The bonding layerstructure of claim 1, further comprising a porous plug disposed adjacentthe bonding layer.
 6. The bonding layer structure of claim 1, whereincenters of the flow aperture through the first body, the flow aperturethrough the second body, the first opening through the first bondinglayer, and the second opening through the second bonding layer arealigned along an axis extending therethrough.
 7. A bonding layerstructure, comprising: an electrostatic chuck having a first apertureformed therethrough; a temperature control base having a second apertureformed therethough; a bonding layer disposed between the electrostaticchuck and the temperature control base, the bonding layer having a totalthickness between about 100 μm and about 800 μm, the bonding layercomprising: a first bonding layer having a first opening extendingthrough the first bonding layer; and a second bonding layer having asecond opening extending through the second bonding layer, wherein thesecond opening has a diameter greater than a diameter of the firstopening; and a porous plug disposed adjacent the bonding layer.
 8. Thebonding layer structure of claim 7, wherein the bonding layer comprisesan organic material.
 9. The bonding layer structure of claim 8, whereinthe organic material comprises silicone, acrylic, or perfluoro polymer.10. The bonding layer structure of claim 7, wherein the second aperturecomprises a counterbore forming a cylindrical recess.
 11. The bondinglayer structure of claim 10, wherein the diameter of the second openingis equal to or greater than a diameter of the cylindrical recess. 12.The bonding layer structure of claim 7, wherein centers of the firstaperture, the second aperture, the first opening, and the second openingare aligned along an axis extending therethrough.
 13. The bonding layerstructure of claim 7, further comprising a series of vanes formed withinthe electrostatic chuck and partially defining the first aperture.
 14. Abonding layer structure, comprising: an electrostatic chuck having afirst aperture formed therethrough; a temperature control base having asecond aperture formed therethough, wherein the second aperturecomprises a first diameter and a second diameter different from thefirst diameter; a bonding layer disposed between the electrostatic chuckand the temperature control base, the bonding layer comprising: a firstbonding layer adhered to the electrostatic chuck and having a firstopening extending through the first bonding layer; and a second bondinglayer adhered to the temperature control base and having a secondopening extending through the second bonding layer, wherein the secondopening has a diameter greater than a diameter of the first opening; anda porous plug disposed adjacent the bonding layer.
 15. The bonding layerstructure of claim 14, wherein the second diameter of the temperaturecontrol base is smaller than the first diameter of the temperaturecontrol base.
 16. The bonding layer of claim 14, wherein the diameter ofthe second opening of the second bonding layer is substantially equal toor greater than the first diameter of the temperature control base. 17.The bonding layer of claim 14, wherein the diameter of the first openingof the first bonding layer is substantially equal to the first diameterof the temperature control base.
 18. The bonding layer structure ofclaim 14, wherein the bonding layer comprises an organic material. 19.The bonding layer structure of claim 14, wherein the bonding layercomprises an inorganic material.
 20. The bonding layer structure ofclaim 14, wherein centers of the first aperture, the second aperture,the first opening, and the second opening are aligned along an axisextending therethrough.